BUK481-100A Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK481-100A
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_amb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_amb); conditions: V_GS ≥ 10 V
Zth j-amb / (K/W)
1E+02 _{D =}
0.5
BUKX81
0.2
1E+01 _0.1
0.05
0.02
1E+00
P
tp
D
D = ^tp
T
1E-01
t
T
1E-02
1E-07
1E-05
1E-03 1E-01
t/s
1E+01 1E+03
Fig.3. Transient thermal impedance.
Z_{th j-amb} = f(t); parameter D = t_p/T
ID / A
10
1
RDS(ON) ^{= VDS/ID}
BUK481-100A
tp = 10 us
100 us
1 ms
10 ms
0.1
DC
100 ms
1s
10 s
0.01
1
10
100
VDS / V
Fig.4. Safe operating area T_amb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
ID / A
5
15
7
10
4
BUK481-100A
6.5
6
3
5.5
2
5
1
4.5
VGS / V = 4
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
2
4.5 5 5.5 6
1.8
BUK481-100A
6.5
7
1.6
1.4
1.2
1
0.8
10
0.6
0.4
VGS / V = 15
0.2
0
0
1
2
3
4
5
ID / A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
January 1998
3
Rev 1.000