BUK466-60A Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK466-60A
VGS / V
12
10
8
BUK456-50
VDS / V =10
40
6
4
2
0
0
20
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 52 A; parameter V_DS
IF / A
100
BUK456-50A
50
150 C
25 C
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
February 1996
5
Rev 1.000