 English |
|
|
|
|
|
|
|
| BUK466-60A Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor | |||
| |||
| ◁ |
Philips Semiconductors
PowerMOS transistor
Product specification
BUK466-60A
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ËC
VDS = 60 V; VGS = 0 V; Tj =125 ËC
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 29 A
MIN. TYP. MAX. UNIT
60
-
-
V
2.1 3.0 4.0 V
-
1
10 µA
-
0.1 1.0 mA
-
10 100 nA
- 0.024 0.028 â¦
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 29 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 10 V;
RGS = 50 â¦;
Rgen = 50 â¦
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
MIN.
17
-
-
-
-
-
-
-
-
-
TYP.
22
1500
800
270
20
70
170
120
2.5
7.5
MAX.
-
2000
1000
400
30
100
220
160
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 52 A ; VGS = 0 V
trr
Reverse recovery time
IF = 52 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
52
A
-
- 208 A
-
1.8 2.5 V
-
80
-
ns
-
0.4
-
µC
February 1996
2
Rev 1.000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese