BUK465-60H Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK465-60H
VGS / V
20
BUK4Y5-60H
15
VDD / V = 12
48
10
5
0
0
10
20
30
40
50
60
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 43 A; parameter V_DS
IS / A
100
Tj / C =
-40
80
25
150
60
BUKXY5-60H
40
20
0
0
0.5
1
1.5
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
W_DSS% = f(T_mb); conditions: I_D = 43 A
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
W_DSS = 0.5 ⋅ LI_D² ⋅ BV_DSS/(BV_DSS − V_DD)
August 1995
5
Rev 1.000