BUK465-60H Datasheet, PDF (1/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK465-60H
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_DS
I_D
P_tot
T_j
R_DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
43
125
175
34
UNIT
V
A
W
˚C
mΩ
PINNING - SOT404
PIN
DESCRIPTION
1 gate
2 drain
3 source
mb drain
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DS
V_DGR
±V_GS
I_D
I_D
I_DM
P_tot
T_stg
T_j
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
-
R_GS = 20 kΩ
-
T_mb = 25 ˚C
T_mb = 100 ˚C
T_mb = 25 ˚C
T_mb = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
minimum footprint,
FR4 board (see Fig. 18).
MAX.
60
60
30
43
31
172
125
175
175
UNIT
V
V
V
A
A
A
W
˚C
˚C
TYP.
-
50
MAX. UNIT
1.2 K/W
-
K/W
August 1995
1
Rev 1.000