BUK451-100A Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Preliminary Specification
BUK451-100A/B
VGS / V
15
10
5
BUK4y1-100A
VDS / V = 20
80
0
0
2
4
6
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 3 A; parameter V_DS
IF / A
10
BUK4y1-100A
9
8
7
6
5
Tj / C = 150
4
3
25
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
January 1980