BUK451-100A Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Preliminary Specification
BUK451-100A/B
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID / %
120
Normalised Current Derating
110
100
90
A
80
B
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 5 V
ID / A
100
10
1
A
B
RDS(ON) ^{= VDS/ID}
DC
BUK451-100
tp =
10 us
100 us
1 ms
10 ms
100 ms
0.1
1
10
100
VDS / V
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth j-mb / (K/W)
10
D=
0.5
1
0.2
0.1
0.05
0.1 ^0.02
0
P_D
tp
D
=
tp
T
T
t
0.01
1E-05
1E-03
1E-01
1E+01
t/s
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
ID / A
10
VGS / V =
8
6
4
BUK4y1-100
15
10
9
8
7
2
6
5
0
0
4
8
12
16
20
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
ID / A
BUK4y1-100
5
56
7
VGS / V =
4
8
3
9
10
15
2
1
0
0
2
4
6
8
10
VDS / V
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
January 1980