BUK444-800A Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK444-800A/B
VGS / V
12
10
8
BUK454-800
VDS / V =160
640
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 2.4 A; parameter V_DS
IF / A
6
BUK454-800A
5
Tj / C = 150
25
4
3
2
1
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
April 1993
5
Rev 1.100