BUK444-800A Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK444-800A/B
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V_(BR)DSS
V_GS(TO)
I_DSS
I_DSS
I_GSS
R_DS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
V_GS = 0 V; I_D = 0.25 mA
V_DS = V_GS; I_D = 1 mA
V_DS = 800 V; V_GS = 0 V; T_j = 25 ˚C
V_DS = 800 V; V_GS = 0 V; T_j =125 ˚C
V_GS = ±30 V; V_DS = 0 V
V_GS = 10 V;
BUK444-800A
I_D = 1.0 A
BUK444-800B
MIN.
800
2.1
-
-
-
-
-
TYP.
-
3.0
2
0.1
10
5.0
6.0
MAX. UNIT
-
V
4.0 V
20 µA
1.0 mA
100 nA
6.0 Ω
8.0 Ω
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
g_fs
Forward transconductance
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
t_{d on}
Turn-on delay time
t_r
Turn-on rise time
t_{d off}
Turn-off delay time
t_f
Turn-off fall time
L_d
Internal drain inductance
L_s
Internal source inductance
CONDITIONS
V_DS = 25 V; I_D = 1.0 A
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_DD = 30 V; I_D = 1.9 A;
V_GS = 10 V; R_GS = 50 Ω;
R_gen = 50 Ω
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
1.0
-
-
-
-
-
-
-
-
TYP.
2.3
450
42
15
15
25
50
30
4.5
MAX.
-
750
70
30
20
40
65
40
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
7.5
-
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
1500 V
-
12
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_DR
Continuous reverse drain
-
current
I_DRM
Pulsed reverse drain current -
V_SD
Diode forward voltage
I_F = 1.4 A ; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 1.4 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge
V_GS = 0 V; V_R = 100 V
MIN. TYP. MAX. UNIT
-
-
1.4 A
-
-
5.6 A
-
1.0 1.3 V
- 230 -
ns
-
1.9
-
µC
April 1993
2
Rev 1.100