BUJ403BX Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ403BX
Zth / (K/W)
10
BU1706AX
0.5
1 _0.2
0.1
0.05
0.1 _0.02
0.01
D=0
P_D
tp
tp
D= _T
T
t
0.001
1u 10u 100u 1m 10m 100m 1 10 100
t/s
Fig.13. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
IC (A)
11
10
9
8
7
6
5
4
3
2
1
0
0
Fig.14.
200
400
600
800
1,000
VCEclamp (V)
1,200
1,400
Reverse bias safe operating area. T_j ≤ T_{j max}
VCC
IBon
-VBB
LC
LB
VCL(RBSOAR)
PROBE POINT
T.U.T.
Fig.15. Test circuit for reverse bias safe operating
area.
V_cl ≤ 1200V; V_cc = 150V; V_BB = -5V; L_B = 1µH;L_c =
200µH
November 1999
5
Rev 1.100