BUJ403BX Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ403BX
AVALANCHE ENERGY CAPABILITY
SYMBOL PARAMETER
EAS
Avalanche Energy Capability¹
CONDITIONS
V_CC = 150V; V_BB = -5V; L_C =
15mH;L_B = 1µH
T_hs ≤ 110 ˚C
TYP. MAX. UNIT
-
1.0 mJ
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-a}
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES,I_CBO
I_CES
Collector cut-off current ²
I_CEO
I_EBO
V_CEOsust
V_CEsat
V_BEsat
h_FE
h_FE
h_FEsat
Collector cut-off current ²
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
V_CEO = V_CEOMmax(550V)
V_EB = 9 V; I_C = 0 A
I_B = 0 A; I_C = 10 mA;
L = 25 mH
I_C = 2.0 A;I_B = 0.4 A
I_C = 2.0 A;I_B = 0.4 A
I_C = 1 mA; V_CE = 5 V
I_C = 500 mA;V_CE = 5 V
I_C = 2.0 A; V_CE = 5 V
MIN.
-
-
TYP. MAX. UNIT
-
0.2 mA
-
0.5 mA
-
-
0.1 mA
-
-
1.0 mA
525
-
-
V
-
0.14 1.0
V
-
0.89 1.5
V
19 28
-
30 45 65
17 21 25
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
t_on
Turn-on time
t_s
Turn-off storage time
t_f
Turn-off fall time
Switching times (inductive load)
t_si
Turn-off storage time
t_fi
Turn-off fall time
Switching times (inductive load)
t_si
Turn-off storage time
t_fi
Turn-off fall time
CONDITIONS
I_Con = 2.5 A; I_Bon = -I_Boff = 0.5 A;
R_L = 75 ohms; V_BB2 = 4 V;
I_Con = 2.5 A; I_Bon = 0.5 A; L_B = 1 µH;
-V_BB = 5 V
I_Con = 2.5 A; I_Bon = 0.5 A; L_B = 1 µH;
-V_BB = 5 V; T_j = 100 ˚C
TYP. MAX. UNIT
0.6 0.95 µs
4.5 6.4 µs
0.4 0.59 µs
1.67 2.3 µs
140 203 ns
1.9 2.7 µs
144 216 ns
1 Fig. 14 without clamping voltage (VCL). Probe point is used to measure the BVCE at avalanche.
2 Measured with half sine-wave voltage (curve tracer).
November 1999
2
Rev 1.100