BUJ304A Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ304A
IC/A
11
10
9
8
7
6
5
-5V
4
-3V
3
2
-1V
1
0
300
400
500
600
700
800
VCE clamp (V)
900 1,000 1,100
Fig.13. Reverse bias safe operating area (T_j < T_jmax)
for -V_be = 5V,3V & 1V
VCC
LC
IBon
LB
VCL(RBSOAR)
PROBE POINT
-VBB
T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
V_clamp < 1100V; V_cc = 150V; -V_be = 5V,3V & 1V;
L_B = 1µH; L_C = 200µH
March 1999
5
Rev 1.000