BUJ106A Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ106A
IC/A
14
12
10
8
6
-5V
4
-3V
2
-1V
0
0
100
200
300 400 500 600
VCEclamp/V
700
800
900
Fig.13. Reverse bias safe operating area (T_j < T_jmax)
for -V_be = 5V,3V and 1V.
VCC
LC
IBon
LB
VCL(RBSOAR)
PROBE POINT
-VBB
T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
V_clamp < 1000V; V_cc = 150V; -V_be = 5V,3V & 1V;
L_B = 1µH; L_C = 200µH
March 1999
5
Rev 2.000