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| BUJ106A Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ106A
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES,ICBO
ICES
Collector cut-off current 1
ICEO
IEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE
hFEsat
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VCEO = VCEOMmax (400V)
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 10 mA;
L = 25 mH
IC = 6.0 A;IB = 1.2 A
IC = 6.0 A;IB = 1.2 A
IC = 5 mA; VCE = 5 V
IC = 500 mA; VCE = 5 V
IC = 6.0 A; VCE = 5 V
MIN.
-
-
TYP. MAX. UNIT
-
0.2 mA
-
0.5 mA
-
-
0.1 mA
-
-
1 mA
400
-
-
V
-
0.4 1.0
V
-
1.0 1.5
V
10 17 32
14 21 33
8
11 15
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 5 A; IBon = -IBoff = 1 A;
RL = 75 ohms; VBB2 = 4 V;
ICon = 5 A; IBon = 1 A; LB = 1 µH;
-VBB = 5 V
ICon = 5A; IBon = 1 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ËC
TYP. MAX. UNIT
0.56 0.75 µs
2.2 3.3 µs
260 350 ns
1.35 1.60 µs
20 50 ns
-
3.2 µs
-
100 ns
1 Measured with half sine-wave voltage (curve tracer).
March 1999
2
Rev 2.000
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