BUJ105AB Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ105AB
10
Zth(j-mb)
(K/W)
1 _δ=
0.5
0.2
0.1
10-1
0.02
0.05
Single pulse
P
δ
=
tp
T
tp
t
T
10-2
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig.13. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter δ = t_p/T
VCC
IC/A
11
10
9
8
7
6
5
-5V
4
-3V
3
2
-1V
1
0
0
Fig.15.
100
200
300
400
500
VCEclamp/V
600
700
800
Reverse bias safe operating area (T_j < T_jmax)
for -V_BE = 5V,3V & 1V.
IBon
-VBB
LC
LB
VCL(RBSOAR)
PROBE POINT
T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
V_clamp < 700V; V_cc = 150V; -V_be = 5V,3V & 1V;
L_B = 1µH; L_C = 200µH.
October 2001
5
Rev 1.000