BUJ105A Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ105A
Zth / (K/W)
10
1
D= 0.5
0.2
0.1
0.1 ^0.05
0.02
0
P_D
tp
tp
D= _T
T
t
0.01
1E-06
1E-04
1E-02
t/s
1E+00
Fig.13. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
VCC
IC/A
11
10
9
8
7
6
5
-5V
4
-3V
3
2
-1V
1
0
0
Fig.15.
100
200
300
400
500
VCEclamp/V
600
700
800
Reverse bias safe operating area (T_j < T_jmax)
for -V_BE = 5V,3V & 1V.
IBon
-VBB
LC
VCL
LB
T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
V_clamp < 700V; V_cc = 150V; -V_be = 5V,3V & 1V;
L_B = 1µH; L_C = 200µH.
February 1999
5
Rev 1.000