BU508DF Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DF
Zth K/W
10
bu508ax
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0
P_D
tp
D
=
tp
T
0.001
1.0E-07
1.0E-05
1E-03
T
t
1.0E-01
1.0E+1
t/s
Fig.9. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
IC / A
100
ICM max
10 ^{IC max}
= 0.01
tp =
II
10 us
Ptot max
1
100 us
I
0.1
1 ms
10 ms
DC
IC / A
100
ICM max
10 ^{IC max}
= 0.01
tp =
II
10 us
Ptot max
1
100 us
I
0.1
1 ms
10 ms
DC
0.01
1
10
100
1000
VCE / V
Fig.11. Forward bias safe operating area. T_hs = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
0.01
1
10
100
1000
VCE / V
Fig.10. Forward bias safe operating area. T_hs = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
July 1998
5
Rev 1.200