BU508DF Datasheet, PDF (1/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
I_Csat
V_F
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V_BE = 0 V
T_hs ≤ 25 ˚C
I_C = 4.5 A; I_B = 1.6 A
f = 16kHz
I_F = 4.5 A
I_Csat = 4.5 A; f = 16kHz
TYP.
-
-
-
-
-
-
4.5
1.6
0.7
MAX.
1500
700
8
15
34
1.0
-
2.0
-
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT199
PIN
DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_hs ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-hs}
R_{th j-a}
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
34
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
July 1998
1
Rev 1.200