BU4523AF Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4523AF
10 ^{Zth / (K/W)}
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.13. Transient thermal impedance.
IC / A
30
BU2523
20
10
0
100
1000 1500
VCE / V
Fig.15. Reverse bias safe operating area. T_j ≤ T_jmax
VCC
IBend
-VBB
LC
LB
T.U.T.
Fig.14. Test Circuit RBSOA.
VCL
CFB
Ic(sat) (A)
10
9
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
Horizontal frequency (kHz)
Fig.16. I_Csat during normal running vs. frequency of
operation for optimum performance
May 1998
5
Rev 1.100