BU4523AF Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4523AF
hFE
100
VCE = 1 V
10
BU4523AF/X
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10 _{IC / A} 100
Fig.7. High and low DC current gain.
hFE
100
VCE = 5 V
BU4523AF/X
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
10 _{IC / A} 100
Fig.8. High and low DC current gain.
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
0.1
BU4523AF/X
IC/IB = 5
0.01
0.1
1
10
IC / A ¹⁰⁰
Fig.9. Typical collector-emitter saturation voltage.
VBEsat / V
1.2
1.1
IC = 8 A
1
BU4523AF/X
Ths = 25 C
Ths = 85 C
0.9
0.8
IC = 6.5 A
0.7
0.6
0
1
2
3 _{IB / A} 4
Fig.10. Typical base-emitter saturation voltage.
ts/tf / us
10
8
6
BU4523AF/X 16kHz
ICsat = 8 A
Ths = 85 C
Freq = 16 kHz
ts
4
2
tf
0
0
1
2
3
IB / A ⁴
Fig.11. Typical collector storage and fall time.
I_C =8 A; T_j = 85˚C; f = 16kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.12. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C}
May 1998
4
Rev 1.100