BU2727A Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2727A
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.12. Test Circuit RBSOA.
V_CC = 150 V; -V_BB = 1 - 4 V;
L_C = 1 mH; V_CL = 1500 V; L_B = 0.5 - 2 µH;
C_FB = 1 - 3 nF; I_B(end) = 0.8 - 4 A
IC / A
35
BU2727A/AF/D/DF
30
25
Area where
20
fails occur
15
10
5
0
100
1000
1700
VCE / V
Fig.13. Reverse bias safe operating area. T_j ≤ T_jmax
September 1997
5
Rev 1.100