BU2727A Datasheet, PDF (1/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2727A
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand V_CES pulses up to
1700V.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
I_Csat
t_s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V_BE = 0 V
T_mb ≤ 25 ˚C
I_C = 5.0 A; I_B = 0.91 A
I_CM = 5.0 A; I_B(end) = 0.9 A
TYP.
-
-
-
-
-
-
5.0
2.2
MAX.
1700
825
12
30
125
1.0
-
tbf
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT93
PIN
DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_B(AV)
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value ¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
average over any 20 ms period
T_mb ≤ 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
V_C
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
12
30
12
25
200
25
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
-
10 kV
1 Turn-off current.
September 1997
1
Rev 1.100