BU2722AX Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2722AX
Ptot / W
100
10
BU2722AF
Ths = 85 C
Ths = 25 C
1
0
1
2
3
4
IB / A
Fig.13. Typical power dissipation.
P_tot = f(I_B); I_C = 4.5 A; f = 64 kHz; Parameter T_hs
VCC
IC / A
26
BU2720AF/DF
24
22
20
18
Area where
16
fails occur
14
12
10
8
6
4
2
0
100
1000
1700
VCE / V
Fig.15. Reverse bias safe operating area. T_j ≤ T_jmax
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.14. Test Circuit RBSOA. V_CC = 150 V;
-V_BB = 1 - 4 V;
L_C = 1 mH; V_CL = 1500 V; L_B = 1 - 3 µH;
C_FB = 1 - 4 nF; I_B(end) = 0.8 - 4 A
September 1997
5
Rev 1.200