BU2722AX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2722AX
hFE
100
VCE = 1 V
10
BU2720/22AF
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10 _{IC / A} 100
Fig.7. DC current gain. h_FE = f (I_C)
Parameter T_hs
(Low and high gain)
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T_hs)
VCEsat / V
10
Tj = 85 C
Tj = 25 C
1
IC/IB = 8
0.1
BU2722AF
IC/IB = 4
0.01
0.1
1
10
100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
10 ^{Zth / (K/W)}
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D = ^tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.11. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
VBEsat / V
1
Tj = 85 C
Tj = 25 C
0.9
IC = 5.5 A
BU2722AF
ts, tf / us
10
BU2722AF
0.8
1
4.5 A
0.7
0.6
0
Fig.9.
0.5
1
1.5
2
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
0.1
0
1
2
3
4
IB / A
Fig.12. Typical storage and fall time.
t_s = f(I_B); t_f = f(I_B); I_C = 4.5 A; f = 64 kHz; T_hs = 85 ˚C
September 1997
4
Rev 1.200