BU2520AX Datasheet, PDF (5/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520AX
ts, tf / us
12
11
16 kHz
ts
10
9
8
7
6
5
IC =
4
6A
3
2
5A
1
tf
0
0.1
1
10
IB / A
Fig.13. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 16 kHz
12 ^{ts, tf / us}
11
32 kHz
10
9
8
ts
7
6
5
IC =
4
3
6A
2
5A
1
tf
0
0.1
1
10
IB / A
Fig.14. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 32 kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.15. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_hs)
10 ^{Zth / (K/W)}
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D = ^tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.16. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
September 1997
5
Rev 2.200