BU2520AX Datasheet, PDF (4/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520AX
hFE
100
5V
10
1V
Tj = 25 C
Tj = 125 C
1
0.1
Fig.7.
1
10
100
IC / A
Typical DC current gain. h_FE = f (I_C)
parameter V_CE
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1
0.9
0.8
0.7
IC/IB=
3
0.6
4
0.5
5
0.4
0.1
1
10
IC / A
Fig.8. Typical base-emitter saturation voltage.
V_BEsat = f (I_C); parameter I_C/I_B
VCESAT / V
1
0.9
0.8
0.7
0.6
IC/IB =
5
4
3
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
100
IC / A
Fig.9. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1
0.9
0.8
0.7
0.6
0
Fig.10.
IC=
8A
6A
5A
4A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCESAT / V
10
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
10
IB / A
Fig.11. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
Eoff / uJ
1000
IC = 6 A
5A
100
32 kHz
16 kHz
10
0.1
1
10
IB / A
Fig.12. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C; parameter frequency
September 1997
4
Rev 2.200