BU1706AX Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AX
IC / A
10 I_CM
I _CDC
1
P_tot
tp =
0.1
100 us
1 ms
10 ms
DC
0.01
1
10 _{VCE / V} 100
1000
Fig.13. Forward bias safe operating area. T_hs = 25 ˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
VCESAT / V
10
BU1706A
h _FE
100
5V
10
1V
Tj = 25 C
1
Tj = 125 C
BU1706A
0.1
0.01
0.1
1
10
IC / A
Fig.15. Typical DC current gain.
h_FE = f(I_C); parameter V_CE
IC / A
6
BU1706A
5
4
3
2
1
0
0
400
800
1200
VCE / V
1600
2000
Fig.16. Reverse bias safe operating area. T_j ≤ T_jmax
1
3A
2A
1.5 A
0.1 ^{IC = 0.5A}
Tj = 25 C
Tj = 125 C
0.01
0.01
0.1
1
10
IB / A
Fig.14. Typical collector-emitter saturation voltage.
V_CEsat = f(I_B); parameter I_C
April 1994
5
Rev 1.000