BU1706AX Datasheet, PDF (1/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
I_Csat
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V_BE = 0 V
T_hs ≤ 25 ˚C
I_C = 1.5 A; I_B = 0.3 A
I_CM = 1.5 A; I_B(on) = 0.3 A
TYP.
-
-
-
-
-
-
1.5
0.25
MAX.
1750
850
5
8
32
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT186A
PIN
DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_B(AV)
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
average over any 20ms period
T_hs ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-a}
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1750
850
5
8
3
5
100
4
32
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
April 1994
1
Rev 1.000