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| BLF8G24LS-150V_15 Datasheet, PDF (5/16 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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NXP Semiconductors
BLF8G24LS-150(G)V
Power LDMOS transistor
7.3 VBW in a class-AB operation
The BLF8G24LS-150V shows 70 MHz (typical) video bandwidth (IMD third-order
intermodulation inflection point) in a class-AB test circuit in the 2.3 GHz to 2.4 GHz band
at VDS = 28 V and IDq = 1.3 A.
,0'
G%F
,0'
,0'
,0'
VDS = 28 V; IDq = 1300 mA; fc = 2350 MHz.
(1) low
(2) high
Fig 2. VBW capacity in class-AB test circuit
7.4 Test circuit
DDD
FDUULHUVSDFLQJ 0+]
PP
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5
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PP
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7
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BLF8G24LS-150V_8G24LS-150GV
Product data sheet
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DDD
Fig 3.
Printed-Circuit Board (PCB): Rogers 4350B with a thickness of 0.76 mm. See Table 9 for a list of
components.
Component layout
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 12 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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