BLF8G24LS-150V_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G24LS-150V;
BLF8G24LS-150GV
Power LDMOS transistor
Rev. 3 — 12 May 2014
Product data sheet
1. Product profile
1.1 General description
150 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR_5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2300 to 2400
1300 28 45
19
33 30 ^[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Decoupling leads to enable improved video bandwidth (70 MHz typical)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent digital pre-distortion capability
 Internally matched for ease of use
 Integrated ESD protection
 Design optimized for gull-wing
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range