BLF888D_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – UHF power LDMOS transistor

NXP Semiconductors
BLF888D; BLF888DS
UHF power LDMOS transistor
Table 9. List of components …continued
For test circuit see Figure 1.
Component
Description
Value
Remarks
C22, C23
multilayer ceramic chip capacitor 47 pF
[2]
C30
multilayer ceramic chip capacitor 15 pF
[3]
C31
multilayer ceramic chip capacitor 5.6 pF
[3]
C32
multilayer ceramic chip capacitor 2.7 pF
[3]
C33, C34, C35
multilayer ceramic chip capacitor 100 pF
[3]
C36, C37
multilayer ceramic chip capacitor 470 F, 50 V
R1, R2
resistor
10 
R3, R4
resistor
5.6 
SMD 1206
R5, R6
resistor
100 
R3, R4
resistor
510 
SMD 1206
T1, T2
semi rigid coax
25 , length = 160 mm
Micro-Coax
UT-090C-25
[1] American Technical Ceramics type 180R or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 100A or capacitor of same quality.
7.3 Graphical data
7.3.1 1-Tone CW pulsed

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I_Dq = 2  650 mA; t_p = 100 s;  = 10 %.
(1) V_DS = 40 V
(2) V_DS = 45 V
(3) V_DS = 50 V
(4) V_DS = 55 V
Fig 2. Power gain as a function of output power;
typical values

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3_/:
I_Dq = 2  650 mA; t_p = 100 s;  = 10 %.
(1) V_DS = 40 V
(2) V_DS = 45 V
(3) V_DS = 50 V
(4) V_DS = 55 V
Fig 3. Drain efficiency as a function of output power;
typical values
BLF888D_BLF888DS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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