BLF888D_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF888D; BLF888DS
UHF power LDMOS transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The
excellent ruggedness of this device makes it ideal for digital and analog transmitter
applications.
Table 1. Application information
RF performance at V_DS = 50 V in an ultra wide Doherty application.
Test signal
f
P_L(AV)
G_p _D
(MHz)
(W)
(dB) (%)
DVB-T (8k OFDM)
470 to 860 115 to 134 ^[1] 17 40 to 48 ^[1]
IMD_shldr
(dBc)
38 to 44 ^[2]
PAR
(dB)
8 ^[3]
[1] Depending on selected channel.
[2] Depending on exciter used.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
 High efficiency
 High power gain
 Excellent ruggedness (VSWR  40 : 1 through all phases)
 Excellent thermal stability
 Integrated ESD protection
 One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
 Internal input matching for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Broadcast transmitter applications in the UHF band
 Digital broadcasting