BGY925 Datasheet, PDF (5/12 Pages) NXP Semiconductors – UHF amplifier module

Philips Semiconductors
UHF amplifier module
Product specification
BGY925
handbook,³h⁵alfpage
Gp
(dB)
30
MCD834
25
20
800
900
1000
1100
f (MHz)
Z_S = Z_L = 50 Ω; P_D = −30 dBm; V_S1 = V_S2 = 26 V; T_mb = 25 °C.
Fig.6 Small signal in band power gain as a
function of frequency; typical values.
han_Rdb_eo_to_uk_r,_nh⁰alfpage
Losses
(dB)
−4
−8
−12
−16
−20
800
900
MCD835
1000
1100
f (MHz)
Z_S = Z_L = 50 Ω; P_D = −30 dBm; V_S1 = V_S2 = 26 V; T_mb = 25 °C.
Fig.7 Small signal in band input return losses as
a function of frequency; typical values.
40
handbo_Go_pk, halfpage
(dB)
20
0
−20
−40
−60
−80
0
500
MCD836
1000
1500
f (MHz)
Z_S = Z_L = 50 Ω; V_S1 = V_S2 = 26 V; P_D = −30 dBm; T_mb = 25 °C.
Fig.8 Small signal out band power gain as a
function of frequency; typical values.
2000 Feb 02
34
handbook, halfpage
Gp
(dB)
32
30
28
26
MCD837
(1)
(2)
(5)
(6)
(7)
(3)
(4)
24
0
10
20
30
40
PL (W)
Z_S = Z_L = 50 Ω; V_S1 = V_S2 = 26 V; T_mb = 25 °C.
(1) T_amb = −33°C.
(2) T_amb = −20°C.
(3) T_amb = 3°C.
(4) T_amb = 25°C.
(5) T_amb = 50°C.
(6) T_amb = 75°C.
(7) T_amb = 100°C.
Fig.9 Power gain as a function of load power;
typical values
5