BFU710F Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
Table 7. Characteristics …continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
P_L(1dB) output power at 1 dB gain compression
IP3
third-order intercept point
Conditions
I_C = 5 mA; V_CE = 2.5 V;
Z_S = Z_L = 50 Ω; T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I_C = 10 mA; V_CE = 1.5 V;
Z_S = Z_L = 50 Ω; T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
[1] G_p(max) is the maximum power gain, if K > 1. If K < 1 then G_p(max) = MSG.
Min Typ Max Unit
- 5.5 -
-5
-
- 5.5 -
- 4.5 -
dBm
dBm
dBm
dBm
- 18 -
- 18 -
- 18 -
- 19.5 -
dBm
dBm
dBm
dBm
10
I_C
(mA)
8
6
4
2
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(1)
(2)
(3)
(4)
(5)
(6)
(7)
0
0
1
2
3
V_CE (V)
T_amb = 25 °C.
(1) I_B = 35 μA
(2) I_B = 30 μA
(3) I_B = 25 μA
(4) I_B = 20 μA
(5) I_B = 15 μA
(6) I_B = 10 μA
(7) I_B = 5 μA
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
500
h_FE
400
300
200
100
0
0
2
4
6
V_CE = 2 V; T_amb = 25 °C.
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8
10
I_C (mA)
Fig 3. DC current gain as a function of collector
current; typical values
BFU710F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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