BFU710F Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
V_(BR)CBO
V_(BR)CEO
I_C
I_CBO
h_FE
C_CES
C_EBS
C_CBS
f_T
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
G_p(max) maximum power gain
|s₂₁|²
insertion power gain
NF
noise figure
G_ass
associated gain
Conditions
I_C = 2.5 μA; I_E = 0 mA
I_C = 1 mA; I_B = 0 mA
I_E = 0 mA; V_CB = 4.5 V
I_C = 1 mA; V_CE = 2 V
V_CB = 2 V; f = 1 MHz
V_EB = 0.5 V; f = 1 MHz
V_CB = 2 V; f = 1 MHz
I_C = 9 mA; V_CE = 2 V; f = 2 GHz;
T_amb = 25 °C
I_C = 9 mA; V_CE = 2 V; T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I_C = 9 mA; V_CE = 2 V; T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I_C = 2 mA; V_CE = 2 V; Γ_S = Γ_opt;
T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I_C = 2 mA; V_CE = 2 V; Γ_S = Γ_opt;
T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
Min Typ
10 -
2.8 -
-2
--
200 375
- 183
- 262
- 21
- 43
Max Unit
-V
-V
10 mA
100 nA
550
- fF
- fF
- fF
- GHz
[1]
- 30 - dB
- 29 - dB
- 27.5 - dB
- 21 - dB
- 14 - dB
- 25 - dB
- 24 - dB
- 23 - dB
- 17 - dB
- 11.5 - dB
- 0.55 - dB
- 0.55 - dB
- 0.60 - dB
- 0.85 - dB
- 1.45 - dB
- 27 - dB
- 24.5 - dB
- 22.5 - dB
- 16 - dB
- 11.5 - dB
BFU710F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
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