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BFU630F Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
Table 7. Characteristics â¦continued
Tj = 25 ï°C unless otherwise specified
Symbol Parameter
IP3
third-order intercept point
Conditions
IC = 30 mA; VCE = 2.5 V;
ZS = ZL = 50 ï; Tamb = 25 ï°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
Min Typ Max Unit
- 25.5 -
- 26 -
- 26.5 -
- 27.5 -
dBm
dBm
dBm
dBm
25
IC
(mA)
20
15
10
5
001aam813
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 ï°C.
(1) IB = 200 ïA
(2) IB = 180 ïA
(3) IB = 160 ïA
(4) IB = 140 ïA
(5) IB = 120 ïA
(6) IB = 100 ïA
(7) IB = 80 ïA
(8) IB = 60 ïA
(9) IB = 40 ïA
(10) IB = 20 ïA
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
hFE
150
001aam814
100
50
0
0
10
VCE = 2 V; Tamb = 25 ï°C.
20
30
IC (mA)
Fig 3. DC current gain as a function of collector
current; typical values
BFU630F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 15 December 2010
© NXP B.V. 2010. All rights reserved.
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