BFU630F Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

BFU630F
NPN wideband silicon RF transistor
Rev. 1 — 15 December 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
 Low noise high gain microwave transistor
 Noise figure (NF) = 0.85 dB at 2.4 GHz
 High maximum stable gain 26 dB at 1.8 GHz
 40 GHz f_T silicon technology
1.3 Applications
 Low noise amplifiers for microwave communications systems
 WLAN and CDMA applications
 Analog/digital cordless applications
 Ku band oscillators DRO’s
 LNB
 RKE
 AMR
 GPS
 ZigBee
 LTE, cellular, UMTS
 FM radio
 Mobile TV
 Bluetooth