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BFQ67 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor
Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67
25
handbook, halfpage
gain
(dB)
20
MSG
15
10
5
0
0
10
MRA611
Gmax
GUM
20
30
IC (mA)
VCE = 8 V; f = 1 GHz.
Fig.6 Gain as a function of collector current,
typical values.
handbook,5h0alfpage
gain
(dB)
40
30
20
10
0
10
GUM
MRA610
MSG
102
Gmax
103
104
f (MHz)
VCE = 8 V; IC = 5 mA.
Fig.7 Gain as a function of frequency, typical
values.
handbook,5h0alfpage
gain
(dB)
40
30
20
GUM
MSG
MRA608
10
0
10
Gmax
102
103
104
f (MHz)
50
handbook, halfpage
gain
(dB)
40
30
20
GUM
MSG
10
0
10
102
MRA609
Gmax
103
104
f (MHz)
VCE = 8 V; IC = 15 mA.
Fig.8 Gain as a function of frequency, typical
values.
1998 Aug 27
VCE = 8 V; IC = 30 mA.
Fig.9 Gain as a function of frequency, typical
values.
5