BFQ67 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67
handboo⁴k,⁰h⁰alfpage
Ptot
(mW)
300
MRA614
200
100
0
0
50
100
150
200
Ts (oC)
Fig.2 Power derating curve.
handboo¹k,²h⁰alfpage
h _FE
80
MBB301
40
0
0
20
40 _{I C (mA)} 60
V_CE = 5 V.
Fig.3 DC current gain as a function of collector
current, typical values.
0.8
handbook, halfpage
Cre
(pF)
0.6
0.4
0.2
0
0
5
MRA607
10
15
VCB (V)
I_C = i_c = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
1998 Aug 27
10
handbook, halfpage
fT
(GHz)
8
MBB303
6
4
2
0
0
10
20
30
40
IC (mA)
V_CE = 8 V; T_amb = 25 °C; f = 2 GHz.
Fig.5 Transition frequency as a function of
collector current, typical values.
4