BFC520 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN wideband cascode transistor

Philips Semiconductors
NPN wideband cascode transistor
Product specification
BFC520
handbook¹, ^.h⁵alfpage
Ptot
(mW)
double loaded
1
single loaded
0.5
MBG228
12
handbook, halfpage
fT
(GHz)
8
4
MBG219
VC2-E1 _{= 12 V}
9V
6V
3V
0
0
50
100
150
200
Ts (^oC)
Fig.2 Power derating as a function of soldering
point temperature; typical values.
0
1
10
IC (mA)
10²
f = 1 GHz; T_amb = 25 °C.
Fig.3 Transition frequency as a function of
collector current; typical values.
4
handbook, halfpage
F
(dB)
3
2
1
0
10^−1
MGG219
IC = 2 mA
10 mA
1
f (GHz)
10
3
handbook, halfpage
F
(dB)
2
1
0
1
MGG220
f = 900 MHz
500 MHz
10
IC (mA)
10²
V_C2-E1 = 3 V.
Fig.4 Minimum noise figure as a function of
frequency; typical values.
1997 Sep 10
V_C2-E1 = 3 V.
Fig.5 Minimum noise figure as a function of
collector current; typical values.
5