BFC520 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN wideband cascode transistor

Philips Semiconductors
NPN wideband cascode transistor
Product specification
BFC520
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V_(BR)CBO collector-base breakdown voltage I_C = 2.5 µA; I_E = 0
20
V_(BR)CEO collector-emitter breakdown voltage I_C = 10 µA; I_B = 0
8
V_(BR)EBO emitter-base breakdown voltage I_E = 2.5 µA; I_C = 0
2.5
I_CBO
collector-base leakage current
I_E = 0; V_CB = 6 V
−
h_FE
DC current gain
I_C = 20 mA; V_CE = 6 V
60
AC characteristics of the cascode configuration
f_T
transition frequency
I_C = 20 mA; V_C2-E1 = 3 V;
−
f = 1 GHz
C_c
collector capacitance T2
I_E = i_e = 0; V_C2-B2 = 1 V;
−
f = 1 MHz
C_re2
feedback capacitance T2
I_C = 0; V_C2-E1 = 3 V; f = 1 MHz −
C_re
feedback capacitance
I_C = 0; V_C2-E1 = 3 V; f = 1 MHz −
MSG
maximum stable power gain; note 1 I_C = 20 mA; V_C2-E1 = 3 V;
−
f = 900 MHz; T_amb = 25 °C
I_C = 20 mA; V_C2-E1 = 3 V;
−
f = 2 GHz; T_amb = 25 °C
s₂₁ ²
insertion power gain
I_C = 20 mA; V_C2-E1 = 3 V;
−
f = 900 MHz; T_amb = 25 °C
I_C = 20 mA; V_C2-E1 = 3 V;
−
f = 2 GHz; T_amb = 25 °C
s₂₁ ⁄ s₁₂ ^{2 maximum isolation; note 2}
f = 900 MHz
f = 2 GHz
−
−
F
noise figure
I_C = 5 mA; V_C2-E1 = 3 V;
−
f = 900 MHz; Γ_S = Γ_opt
IP₃
third order intercept point (input) note 3
−
−
−
V
−
−
V
−
−
V
−
50
nA
120 250
7
−
0.55 −
500 −
−
10
31
−
19
−
17
−
13
−
63
−
38
−
1.3 1.6
−18 −
GHz
pF
fF
fF
dB
dB
dB
dB
dB
dB
dB
dBm
Notes
1.
MSG =
s₁₂ ⁄ s₂₁
×


k
–
k²
–
1


k = -1----⁺-------s---¹--¹-----^×----s----²--²----^–----2-s---¹-_×-²----^×-s---₁-s--₂-²---_×¹----²_s----2^–--₁---^-----s---¹---¹----²----^–------s---²--²-----²--^--
2. Maximum isolation is defined as the isolation when S₂₁ of the amplifier is reduced to unity (buffer application).
3. I_C =5 mA; V_CE = 3 V; R_S = 50 Ω; Z_L = opt; T_amb = 25 °C;
f_p = 900 MHz; f_q = 902 MHz; measured at f_(2p−q) = 904 MHz.
1997 Sep 10
4