BAW101S Datasheet, PDF (5/10 Pages) NXP Semiconductors – High voltage double diode

Philips Semiconductors
High voltage double diode
10²
handbook, full pagewidth
IFSM
(A)
10
Product specification
BAW101S
MBG703
1
10^−1
1
10
10²
10³
tp (µs)
10⁴
Based on square wave currents.
T_j = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
10²
handbook, halfpage
IR
(µA)
10
(1)
(2)
1
MLE058
10^−1
10^−2
0
50
100
150
200
Tj (°C)
handbook⁰, ^.h⁶alfpage
Cd
(pF)
0.5
MLE059
0.4
0.3
0.2
0
2
4
6
8
10
VR (V)
(1) V_R = V_RMAX: maximum values.
(2) V_R = V_RMAX: typical values.
Fig.5 Reverse current as a function of junction
temperature.
2003 May 13
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
5