BAW101S Datasheet, PDF (2/10 Pages) NXP Semiconductors – High voltage double diode

Philips Semiconductors
High voltage double diode
Product specification
BAW101S
FEATURES
• Small plastic SMD package
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Electrically insulated diodes.
APPLICATIONS
• High voltage switching
• Automotive
• Communication.
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
anode 1
n.c.
cathode 2
anode 2
n.c.
cathode 1
DESCRIPTION
The BAW101S is a high-speed switching diode array with ^{handbook, halfpage}
654
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
65 4
MARKING
TYPE NUMBER
BAW101S
MARKING CODE⁽¹⁾
K2∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
12
Top view
3
MBL892
123
Fig.1 Simplified outline (SOT363) and symbol.
2003 May 13
2