OM5193H Datasheet, PDF (43/56 Pages) NXP Semiconductors – Disk drive spindle and VCM with servo controller

Philips Semiconductors
Disk drive spindle and VCM with
servo controller
Product specification
OM5193H
SYMBOL
PARAMETER
CONDITIONS
V_sw(comp)
comparator switching only tested on wafer
level
V_sw(tol)
∆V_sw
tolerance on the
comparator switching
level
only tested on wafer
variation in comparator note 6
switching levels for one
IC
V_i(hys)
input voltage
hysteresis
note 6
V_OL
LOW-level output
sink current = −40 µA;
voltage
only tested on wafer
V_OH
HIGH-level output
source current = 40 µA;
voltage
only tested on wafer
Output drivers: MOTA, MOTB and MOTC
R_{ds(on)(source)}
R_ds(on)(sink)
V_SLEW
SR
high-side driver output
resistance
low-side driver output
resistance
slew rate voltage
slew rate
I_O = 1.0 A at
T_amb = 25 °C
I_O = 1.0 A at
T_amb = 125 °C
I_O = 1.0 A at
T_amb = 25 °C
I_O = 1.0 A at
T_amb = 125 °C
I_SLEW = 20 µA
open-loop; note 9
I_SPRUN
V_CLP
spindle current control
overvoltage protection
circuit
I_SLEW = 30 µA; note 9
V_SPCC = 1.25 V;
R_SENSE = 0.25 Ω
I_SVDMOS > 10 mA
I_L(SP)
spindle power stage
leakage current
Sense amplifier: SPSENSEL and SPSENSEH
I_I
input current on
only tested on wafer
MOTSENSE
V_IO
input offset voltage
note 6
G_v
sense amplifier gain only tested on wafer
TC
temperature
note 6
coefficient of sense
amplifier gain
Control amplifier: SPCC and SPCCOUT
V_SPCC0
spindle zero-current
reference
only tested on wafer;
T_amb = 25 °C
MIN.
−20
−3
TYP.
−
−
−4.2
−
−
0.5
−
−
V_DDA1 − 0.5 −
−
0.36
−
0.56
−
0.24
−
0.44
−
2.55
0.09
−
0.32
−
380
400
−
15.8
−
−
10
−
−
3
9.8
10
−
200
230
250
MAX.
+20
+3
+4.2
−
0.45
−
0.45
0.65
0.35
0.55
−
0.23
0.87
420
−
1
10
−
10.2
−
270
UNIT
mV
mV
mV
mV
V
V
Ω
Ω
Ω
Ω
V
V/µs
V/µs
mA
V
mA
µA
mV
V/V
ppm/°C
mV
1998 Nov 02
43