SA631 Datasheet, PDF (4/16 Pages) NXP Semiconductors – 1GHz low voltage LNA and mixer

Philips Semiconductors
1GHz low voltage LNA and mixer
Product specification
SA631
AC ELECTRICAL CHARACTERISTICS
V_CC = +3.0V, T_amb = 25°C; RF_IN = 881MHz, f_VCO = 964MHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
Low Noise Amplifier
f_RF
S₂₁
S₂₁
∆S₂₁/∆T
∆S₂₁/∆f
S₁₂
S₁₁
S₂₂
P_-1dB
IP3
RF input frequency range
Amplifier gain
Amplifier gain in power-down mode
Gain temperature sensitivity enabled
Gain frequency variation
Amplifier reverse isolation
Amplifier input match
Amplifier output match
Amplifier input 1dB gain compression
Amplifier input third order intercept
NF
Amplifier noise figure
t_ON
t_OFF
Mixer
Amplifier turn-on time (Enable Lo → Hi)
Amplifier turn-off time (Enable Hi → Lo)
PG_C
Mixer power conversion gain: R_P = R_L = 1.2kΩ
S_11M
Mixer input match
NF_M
Mixer SSB noise figure
P_-1dB
Mixer input 1dB gain compression
IP3_M
Mixer input third order intercept
IP_2INT
Mixer input second order intercept
P_RFM-IF Mixer RF feedthrough
P_LO-IF
LO feedthrough to IF
P_LO-RFM LO to mixer input feedthrough
P_LO-RF LO to LNA input feedthrough
Overall System
G_SYS
System gain
800MHz - 1.0GHz
@ 881 MHz
With ext. impedance matching
f_RF = 881MHz, f_LO = 964MHz,
f_IF = 83MHz
Ext. impedance matching req.
RF_IN = –32dBm
LO = –0dBm
LNA + Mixer
LIMITS
–3s
TYP
+3s
UNITS
800
1000
MHz
15
dB
–28
dB
0.006
dB/°C
±0.013
dB/MHz
–28
dB
–10
dB
–10
dB
–20
dBm
–7
dBm
1.7
dB
120
µs
0.3
µs
9.6
–10
10
–14.5
3.3
38
–45
–23
–32
–42
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
23.9
24.6
25.3
dB
1998 Jan 08
4