SA631 Datasheet, PDF (2/16 Pages) NXP Semiconductors – 1GHz low voltage LNA and mixer

Philips Semiconductors
1GHz low voltage LNA and mixer
Product specification
SA631
DESCRIPTION
The SA631 is a combined low-noise BiCMOS amplifier, and mixer
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over –40 to +85°C temperature range. The
wide-dynamic-range mixer has a 10dB noise figure and IP3 of
+3.3dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.
FEATURES
• Low current consumption
• Outstanding gain and noise figure
• Excellent gain stability versus temperature and supply voltage
• LNA and mixer power down capability
• Designed in Philips state of the art BiCMOS QUBIC process
APPLICATIONS
• 900MHz cellular and cordless front-end
• Spread spectrum receivers
• RF data links
• UHF frequency conversion
• Portable radio
ORDERING INFORMATION
DESCRIPTION
20-Pin Shrink Small Outline Package (Surface-mount, SSOP)
PIN CONFIGURATION
PD1 1
PD2 2
GND 3
LO OUT 4
GND 5
GND 6
GND 7
GND 8
GND 9
GND 10
20 MIXER OUT
19 MIXER OUT
18 GND
17 MIXER IN
16 GND
15 LNA IN
14 GND
13 LNA OUT
12 V_CC
11 GND
SR00124
Figure 1. Pin Configuration
TEMPERATURE RANGE
–40 to +85°C
ORDER CODE
SA631DK
DWG #
SOT266-1
BLOCK DIAGRAM
MIXER MIXER
MIXER
LNA
LNA
OUT
OUT
GND
IN
GND
IN
GND
OUT
V_CC
GND
20
19
18
17
16
15
14
13
12
11
LNA
1998 Jan 08
1
2
3
4
5
6
7
8
9
10
PD1
PD2
GND
LO
GND
GND
GND
GND
GND
GND
OUT
SR01588
Figure 2. SA631 Block Diagram
2
853–2045 18847