PZTM1101 Datasheet, PDF (4/7 Pages) NXP Semiconductors – NPN transistor/Schottky-diode module

Philips Semiconductors
NPN transistor/Schottky-diode module
Product specification
PZTM1101
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Schottky barrier diode
V_F
forward voltage
I_R
reverse current
I_R
reverse current
C_j
junction capacitance
I_F = 100 mA; note 1
−
I_F = 100 mA; T_amb = −55 to +150 °C; note 1 −
I_F = 1 A; note 1
−
I_F = 1 A; T_amb = −55 to +150 °C; note 1
−
V_R = 40 V; note 1
−
V_R = 40 V; T_j = 125 °C;
−
T_amb = −55 to +150 °C; note 1
V_R = 10 V; note 1
−
V_R = 10 V; T_j = 125 °C;
−
T_amb = −55 to +150 °C; note 1
V_R = 0 V; f = 1 MHz
−
330 mV
400 mV
500 mV
560 mV
300 µA
35⁽²⁾ mA
40 µA
15⁽²⁾ mA
250 pF
Notes
1. Measured under pulsed conditions: t_p ≤ 300 µs; δ ≤ 0.01.
2. Limiting value for T_j = 125 °C; T_j = 150 °C with reverse current applied is not allowed as this may cause thermal
runaway leading to thermal destruction of the diode. A peak junction temperature of T_j = 150 °C is only allowed with
forward voltage applied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient (combined device) note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
UNIT
K/W
1996 May 09
4