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PZTM1101 Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN transistor/Schottky-diode module | |||
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Philips Semiconductors
NPN transistor/Schottky-diode module
Product speciï¬cation
PZTM1101
FEATURES
⢠Low output capacitance
⢠Fast switching time
⢠Integrated Schottky protection
diode.
APPLICATIONS
⢠High-speed switching for industrial
applications.
PINNING
PIN
DESCRIPTION
1 anode Schottky
2 base
3 emitter
4 collector, cathode Schottky
DESCRIPTION
Combination of an NPN transistor and a Schottky barrier diode in a plastic
SOT223 package. PNP complement: PZTM1102.
handbook, halfpage
4
1
1
2
3
Top view
4
2
3
MAM236
Marking code: TM1101.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
NPN transistor
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Schottky barrier diode
VR
IF
IF(AV)
Tj
continuous reverse voltage
forward current (DC)
average forward current
junction temperature
open emitter
VBE = 0
open collector
reverse current applied
forward current applied
Combined device
Ptot
Tamb
Tstg
Tj
total power dissipation
operating ambient temperature
storage temperature
junction temperature
up to Tamb = 25 °C
MIN. MAX. UNIT
â
60
V
â
40
V
â
6
V
â
200
mA
â
40
V
â
1
A
â
1
A
â
125
°C
â
150
°C
â
1.2
W
â55
+150 °C
â55
+150 °C
â
150
°C
1996 May 09
2
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