PZB16035U Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PZB16035U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting-base T_j = 75 °C
thermal resistance from mounting-base to heatsink T_j = 75 °C; note 1
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
MAX.
2.2
0.2
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_CES
collector cut-off current
I_EBO
emitter cut-off current
C_cb
collector-base capacitance
CONDITIONS
V_CB = 40 V; I_E = 0
V_CB = 30 V; I_E = 0
V_CER = 35 V; R_BE = 0
V_EB = 1.5 V; I_C = 0
V_CB = 28 V; I_E = I_C = 0
TYP.
−
−
−
−
17
MAX.
10
5
50
200
−
UNIT
mA
mA
mA
µA
pF
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common base class B selective amplifier; note 1.
MODE OF
f
V_CC
P_L
G_p
η_C
OPERATION
(GHz)
(V)
(W)
(dB)
(%)
Z_i; Z_L
(Ω)
Class B (CW)
1.55
28
>35; typ. 38 >8; typ. 9.8 >45; typ. 50 see Figs 5 and 6
Note
1. Amplifier consists of pre-matching test-circuit with complementary input and output slug tuners.
handbook, full pagewidth
4
9
6
6.5
5.5
9
3
,,,,,, ,,,,,, _input
,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,, ^50Ω
0.65
6
14 14 6
0.65
100 pF
6 (ATC)
output
50 Ω
MGK062
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.65 mm.
Permittivity: ε_r = 10.
Fig.3 Prematching test circuit boards for CW, class B operation at 1.55 GHz.
1997 Feb 18
4