PZB16035U Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PZB16035U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
CONDITIONS
MIN.
open emitter
−
open base
−
R_BE = 0 Ω
−
open collector
−
−
T_mb = 75 °C
−
−65
−
Up to 0.2 mm from the flange; −
t < 10 s
MAX.
40
15
35
3
4
45
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook,⁶h⁰alfpage
Ptot
(W)
40
MGD968
20
0
0
50
100
150
200
Tmb (°C)
Fig.2 Power derating curve.
1997 Feb 18
3